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2004/3/2· One 8-inch silicon wafer was loaded on each of the wafer boats [Example 2, Comparative Example 2 (base material), Comparative Example 3 (with film)], and heated at 1100 C. in N 2 /O 2 atmosphere to measure the metal impurities transferred onto the silicon
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2016/1/29· Park J. et al. Epitaxial graphene growth by carbon molecular beam epitaxy (CE). Adv. Mater. 22, 4140–4145 (2010).  Emtsev K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 8, 203–207
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The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.
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Silicon carbide materials cross-linked via e-beam radiation show low oxygen content (0.2–0.3 %). Katsumi M, Mitsuru S, Ikuo N, Tsuguo F (2005) Growth of 2 inch ZnO bulk single crystal by the hydrothermal method. Semicond Sci Technol 20(4):S49 Article
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Thermally assisted nanotransfer printing with sub–20-nm resolution and 8-inch wafer scalability By Tae Wan Park , Myunghwan Byun , Hyunsung Jung , Gyu Rac Lee , Jae Hong Park , Hyun-Ik Jang , Jung Woo Lee , Se Hun Kwon , Seungbum Hong , Jong-Heun Lee , …
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Thus, the 8-inch wafer has approximately 78% more surface area than the 6-inch wafer. A 12-inch (300mm) wafer has a surface area of approximately 109.6 square inches or approximately 125% more surface area than an 8-inch wafer.