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2018/6/15· 1. Introduction Silicon carbide is characterized by having a high hardness, thermal conductivity, chemical resistance and thermal strength at elevated temperatures. These properties are related to the strong directional chemical bonds in this material. However, low
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2018/3/14· It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle
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Silicon carbide (SiC), particularly the 4H polytype (4H-SiC), is one of the key candidates for appliion in such devices, owing to its excellent intrinsic properties, which involve a large bandgap (3.26 eV), high breakdown electric field (3 × 10 6 Vcm −1 7 cm s −1 −1
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