Ion Implantation 390 some other technological important semiconductors, such as (gallium arsenide) GaAs, silicon germanium (SiGe), and aluminium nitride (AlN) (Radu et al., 2003; Singh et al., 2005, 2010). These studies have shown that ion-cut process in these
1/3/2012· Silicon carbide (SiC) is known as an excellent material. Single-crystalline 4H-silicon carbide is a fascinating wide band-gap semiconductor material [1-3], suitable for high power and high temperature electronic devices [] because of its suitable properties, such as high electron mobility, high thermal conductivity, high chemical stability, high mechanical hardness, high break down electric
Currently we mainly work with rare-earths doped in crystals, optical defects in silicon carbide, and optical defects in 2D materials. Rare-earth-doped materials Rare earth ions (Lanthanides) doped in crystals have excellent optical (millisecond for Erbium in yttrium orthosilie or YSO) and electron/nuclear spin coherence (up to 6 hours demonstrated in europium doped YSO).
The U.S. Department of Energy''s Office of Scientific and Technical Information @article{osti_1242964, title = {Ag Transport Through Non-Irradiated and Irradiated SiC}, author = {Szlufarska, Izabela and Morgan, Dane and Blanchard, James}, abstractNote = {Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel
In some cases, implanted structures are used as an adjunct to standard commercial processes of thermal diffusion. The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology.
based on the n-type silicon faced substrate. N-wells are formed by P+ ions implantation into epilayer at 550 C. The energies and doses for ion implantation are 150 keV, 100 keV and 2.5×1015cm-2, 8.3×1014cm-2 respectively. The phosphorus ion concentration20
2/10/2001· In silicon carbide, the B-diffusion in a <0001> direction parallel to a c-axis and the B-diffusion in a <1120> direction perpendicular to the c-axis have strong anisotropic natures. That is, the B-diffusion in the <1120> direction is higher than that in the <0001> direction (1999 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES, AND MATERIAL, Septeer, 1999, Tokyo).
Investigation of implanted layers in silicon carbide by a modulation photoreflection method Article (PDF Available) in Technical Physics Letters 23(7):500-503 · July 1997 with 63 Reads
31/7/1990· The invention comprises a bipolar junction transistor formed in silicon carbide. By utilizing high temperature ion implantation of doping ions, the base and emitter can be formed as wells, resulting in a planar transistor. Mesa-type transistors are also disclosed.
Carbide-derived carbon (CDC), also known as tunable nanoporous carbon, is the common term for carbon materials derived from carbide precursors, such as binary (e.g. SiC, TiC), or ternary carbides, also known as MAX phases (e.g., Ti 2 AlC, Ti 3 SiC 2). CDCs
The diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectrometry using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni). Implanted Cr, Fe, and Ni atoms diffuse by subsequent Ar
3 Ion implantation and diffusion in SiC + Show details-Hide details p. 51 –84 (34) In conventional semiconductors like silicon and gallium arsenide, the processes for ion implantation and diffusion are well established. Because of the inherent material properties of SiC
Molecular dynamics simulations of adsorption and diffusion of gases in silicon-carbide nanotubes. The Journal of Chemical Physics 2010, 132 (1) , 014310. DOI: 10.1063/1.3284542. Kazi M. Alam, Asok K. Ray. Interactions of
the silicon film in SiC, probably as a result of the dissolution of carbon in the silicon melt and the diffusion of silicon into on the ion-beam synthesis of silicon carbide buried layers in
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide Vito Simonkaˇ , Andreas Hossinger¨ z, Josef Weinbub , and Siegfried Selberherry Christian Doppler Laboratory for High Performance TCAD at the yInstitute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
High-temperature ion implantation of arsenic (As +) into the 4H-silicon carbide (SiC) substrates with high dose of 7×10 15 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabriion. Regardless of the ion
Journal of Physics: Conference Series OPEN ACCESS Carbon nanotube to SiC nanorod conversion in molten salt studied by EELS and aberration corrected HRTEM To cite this article: W Xie et al 2010 J. Phys.: Conf. Ser. 241 012093 View the article online for
Abstract: Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study,
Silicon carbide A hard white ceramic formed by the reaction of silicon with carbon, having the formula SiC. Silicon carbide is available in several forms including a slurry that can be cast into the required shape. Accordingly, it is used for making large, high carbide.
Ion-beam milling injects Hg interstitials into Hg 1−x Cd x Te in sufficient quantities to convert p-type to n-type. The effects of surface layers can also be significant, for example, an n-type layer on a p-type substrate will have an electric field across the junction which will also be the case if there is a difference in band gaps between the surface layer and substrate.
The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic
A comparative study of 1-5 keV P+ ions channeling in thin (dZ=5OOÅ) and thick Si(110), SiC(110), GaP(110) and AsGa(110) crystals has been carried out by computer simulation within binary collision approximation. The ion ranges, energy losses, angular and
Abstract: A method for the growth of a SiC single crystal comprisingintroducing a seed crystal of SiC single crystal having an exposed face deviating from the {0001} plane by an angle .alpha..sub.1 of about 60.degree. to about 120.degree., typically about 90.degree. and SiC powder as a raw material into a graphite crucible,elevating the temperature of the SiC powder in an atmosphere of inert
24/8/2006· In an eodiment the silicon carbide, germanium carbide and silicon germanium carbide are microcrystalline or amorphous. Such microcrystalline layers or amorphous layers may be grown on insulator layers such as silicon dioxide gate insulator layers, or other insulator layers, by chemical vapor deposition (CVD), laser assisted CVD, plasma CVD, ultra-high vacuum CVD, or sputtering.
and silicon-carbide nanotubes. Journal of Molecular Graphics and Modelling 2017, 75, 149-164. Simulation Study of Ion Diffusion in Charged Nanopores with Anchored Terminal Groups. Electrochimica Acta 2017, 242, 73-85. DOI
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